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| AO4484 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4484/L uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This is an all purpose device that is suitable for use in a wide range of power conversion applications. AO4484 and AO4484L are electrically identical. -RoHS Compliant -AO4484L is Halogen Free Features VDS (V) = 40V ID = 10A RDS(ON) < 10m RDS(ON) < 12m (VGS = 10V) (VGS = 10V) (VGS = 4.5V) D S S S G D D D D S G SOIC-8 Absolute Maximum Ratings TJ=25C unless otherwise noted Symbol 10 Sec Steady State Parameter VDS Drain-Source Voltage 40 VGS 20 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Avalanche Current G Repetitive avalanche energy L=0.3mH Power Dissipation A G B Units V V TA=25C TA=70C ID IDM IAR EAR PD TJ, TSTG TA=25C TA=70C 13.5 10.8 120 23 79 3.1 2.0 -55 to 150 10 8 A mJ 1.7 1.1 W C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t 10s Steady State Steady State RJA RJL Typ 31 59 16 Max 40 75 24 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4484 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID = 250A, VGS = 0V VDS = 40V, VGS = 0V TJ = 55C VDS = 0V, VGS = 20V VDS = VGS ID = 250A VGS = 10V, VDS = 5V VGS = 10V, ID = 10A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS = 4.5V, ID = 8A Forward Transconductance VDS = 5V, ID = 10A Diode Forward Voltage IS = 1A,VGS = 0V Maximum Body-Diode Continuous Current TJ=125C 1.7 120 8.2 12.5 10 75 0.72 1 2.5 1500 VGS=0V, VDS=20V, f=1MHz VGS=0V, VDS=0V, f=1MHz 2 215 135 3.5 27.2 VGS=10V, VDS=20V, ID=10A 13.6 4.5 6.4 6.4 VGS=10V, VDS=20V, RL= 2, RGEN=3 IF=10A, dI/dt=100A/s 17.2 29.6 16.8 30 19 40 5 37 18 1950 10 16 12.5 S V A pF pF pF nC nC nC nC ns ns ns ns ns nC m 2.2 Min 40 1 5 100 3 Typ Max Units V A nA V A STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg (10V) Total Gate Charge Qg (4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using t 300s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. 0 F. The current rating is based on the t 10s thermal resistance rating. G. EAR and IAR ratings are based on low frequency and duty cycles to keep T j=25C. Rev0 April 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha Omega Semiconductor, Ltd. www.aosmd.com AO4484 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 10V 100 80 ID (A) 60 40 20 VGS= 3V 0 0 1 2 3 4 5 VDS (Volts) Figure 1: On-Region Characteristics 16 Normalized On-Resistance 14 RDS(ON) (m) 12 10 8 6 4 0 5 10 VGS= 10V 1.8 1.6 1.4 1.2 1.0 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1E+02 ID= 10A 20 RDS(ON) (m) IS (A) 1E+01 1E+00 125C 1E-01 VGS= 10V ID= 10A VGS= 4.5V ID=8A 0 2 2.5 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics ID(A) 4V 4.5V 80 100 VDS= 5V 60 40 3.5V 20 125C 25C VGS= 4.5V IF=-6.5A, dI/dt=100A/s 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 125C 1E-02 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 1E-03 10 25C 25C OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 1E-04 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 5 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 15 Alpha Omega Semiconductor, Ltd. www.aosmd.com AO4484 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 VGS (Volts) 6 4 2 0 0 5 10 15 20 25 30 Qg (nC) Figure 7: Gate-Charge Characteristics 2500 VDS= 20V ID= 10A Capacitance (pF) 2000 1500 1000 500 Crss 0 0 10 20 30 40 VDS (Volts) Figure 8: Capacitance Characteristics Coss Ciss 1000 100 10s ID (Amps) 10 1 0.1 0.01 0.1 1 RDS(ON) limited TJ(Max)=150C TA=25C 10 100s 1m 10ms 100ms 10s DC 1000 TJ(Max)=150C TA=25C Power (W) 100 10 IF=-6.5A, dI/dt=100A/s 100 VDS (Volts) 1 0.0001 0.01 1 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E) 10 ZJA Normalized Transient Thermal Resistance 1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=75C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 0.01 Ton FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Single Pulse T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E) Alpha Omega Semiconductor, Ltd. www.aosmd.com |
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